View AAT8343_4268820.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

20V P-Channel Power MOSFET General Description
The AAT8343 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density proprietary TrenchDMOSTM technology, this product demonstrates high power handling and small size.
AAT8343
Features
* * * Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -4.5A @ 25C Low On-Resistance: -- 60m @ VGS = -4.5V -- 110m @ VGS = -2.5V
Applications
* * * Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones
TSOP-6 Package
Top View
D 6 D 5 S 4
Absolute Maximum Ratings
TA = 25C, unless otherwise noted. Symbol
VDS VGS ID IDM IS TJ TSTG
1 D
2 D
3 G
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ = 150C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range TA = 25C TA = 70C
Value
-20 12 4.5 3.6 16 -1.3 -55 to 150 -55 to 150
Units
V
A
C C
Thermal Characteristics1
Symbol
RJA RJA2 RJF PD
Description
Junction-to-Ambient Steady State Junction-to-Ambient t<5 Seconds Junction-to-Foot Maximum Power Dissipation TA = 25C TA = 70C
Typ
95 51 25
Max
115 62 30 2.0 1.3
Units
C/W C/W C/W W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300s. 8343.2006.11.1.1
1
20V P-Channel Power MOSFET Electrical Characteristics
TJ = 25C, unless otherwise noted. Symbol Description
DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source On-Resistance1
AAT8343
Conditions
VGS = 0V, ID = -250A
Min
-20
Typ
Max
Units
V
VGS = -4.5V, ID = -4.5A VGS = -2.5V, ID = -3.3A 1 ID(ON) On-State Drain Current VGS = -4.5V, VDS = -5V (pulsed) VGS(th) Gate Threshold Voltage VGS = VDS, ID = -250A IGSS Gate-Body Leakage Current VGS = 12V, VDS = 0V VGS = 0V, VDS = -20V IDSS Drain Source Leakage Current VGS = 0V, VDS = -16V, TJ = 70C2 1 gfs Forward Transconductance VDS = -5V, ID = -4.5A Dynamic Characteristics2 QG Total Gate Charge VDS = -10V, RD = 2.2, VGS = -4.5V QGS Gate-Source Charge VDS = -10V, RD = 2.2, VGS = -4.5V QGD Gate-Drain Charge VDS = -10V, RD = 2.2, VGS = -4.5V tD(ON) Turn-On Delay VDS = -10V, RD = 2.2, VGS = -4.5V, RG = 6 tR Turn-On Rise Time VDS = -10V, RD = 2.2, VGS = -4.5V, RG = 6 tD(OFF) Turn-Off Delay VDS = -10V, RD = 2.2, VGS = -4.5V, RG = 6 tF Turn-Off Fall Time VDS = -10V, RD = 2.2, VGS = -4.5V, RG = 6 Source-Drain Diode Characteristics VSD Source-Drain Forward VGS = 0, IS = -4.5A Voltage1 IS Continuous Diode Current3
49 85 -16 -0.6
60 110
m A V nA A S
100 -1 -5 7 8.5 1.8 2.9 12 32 64 40 -1.3 -1.3
nC
ns
V A
1. Pulse test: Pulse Width = 300s. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
8343.2006.11.1.1
20V P-Channel Power MOSFET Typical Characteristics
TJ = 25C, unless otherwise noted.
Output Characteristics
20
AAT8343
Transfer Characteristics
20
16
5V 4.5V 4V
3.5V
3V
15
VD = VG -55C 25C 125C
IDS (A)
2.5V
8
ID (A)
12
10
4
2V 1.5V
5
0 0 0.5 1 1.5 2 2.5
0
3
01
1
2
3
4
5
VDS (V)
VGS (V)
On-Resistance vs. Drain Current
0.4 0.32
On-Resistance vs. Gate-to-Source Voltage
0.25 0.2
ID = 4.5A
RDS(ON) ()
0.24 0.16 0.08 0 0 5 10 15
RDS(ON) ()
20
0.15 0.1 0.05
VGS = 2.5V
VGS = 4.5V ID (A)
0 0 1 2 3 4 5
VGS (V)
On-Resistance vs. Junction Temperature
1.6 1.5
Threshold Voltage
0.5 0.4
Normalized RDS(ON)
VGS(th) Variance (V)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7
VGS = 4.5V ID = 4.2A
ID = 250A
0.3 0.2 0.1 0 -0.1 -0.2
0.6 -50
-25
0
25
50
75
100
125
150
-0.3 -50 -25 0 25 50 75 100 125 150
TJ (C)
T J (C)
8343.2006.11.1.1
3
20V P-Channel Power MOSFET Typical Characteristics
TJ = 25C, unless otherwise noted.
AAT8343
Gate Charge
5 4 3 2 1 0.1 0 0 2 4 6 8 10 0 100
Source-Drain Diode Forward Voltage
VD = 10V ID = 4.5A
10
VGS (V)
IS (A)
1
TJ = 150C
TJ = 25C
0.2
0.4
0.6
0.8
1
1.2
VSD (V)
QG, Charge (nC)
Capacitance
1000 800 600 400 200 0 0 5 10 15 20
Single Pulse Power, Junction to Ambient
50 45 40
Capacitance (pF)
Ciss
35
Power (W)
30 25 20 15 10 5 0 0.001 0.01 0.1 1 10 100 1000
Coss Crss
VDS (V)
Time (s)
Transient Thermal Response, Junction to Ambient
Normalized Effective Transient Thermal Impedance
10
1
.5 .2 .1 .05 .02
0.1
0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
4
8343.2006.11.1.1
20V P-Channel Power MOSFET Ordering Information
Package
TSOP-6
AAT8343
Marking1
KEXYY
Part Number (Tape and Reel)2
AAT8343IDU-T1
All AnalogicTech products are offered in Pb-free packaging. The term "Pb-free" means semiconductor products that are in compliance with current RoHS standards, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. For more information, please visit our website at http://www.analogictech.com/pbfree.
Package Information
TSOP-6
1.90 BSC 0.95 BSC
1.625 0.125
0.40 0.10
Top View
2.80 0.20
7 NOM 2.95 0.15 0.09 REF
0.85 0.15 1.00 0.10
0.09 REF
0.14 0.06
4 4
GAUGE PLANE
0.05 0.05
0.60 REF
0.45 0.15
0.25 BSC
Side View
All dimensions in millimeters.
End View
1. XYY = assembly and date code. 2. Sample stock is generally held on part numbers listed in BOLD. 8343.2006.11.1.1
5
20V P-Channel Power MOSFET
AAT8343
(c) Advanced Analogic Technologies, Inc. AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice. Customers are advised to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. AnalogicTech and the AnalogicTech logo are trademarks of Advanced Analogic Technologies Incorporated. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6
8343.2006.11.1.1

▲Up To Search▲

Price & Availability of AAT8343

	To Download AAT8343 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .